• DocumentCode
    2301715
  • Title

    Development Status of the ILC Marx Modulator

  • Author

    Nguyen, M. ; Beukers, T. ; Burkhart, C. ; Larsen, R. ; Olsen, J. ; Tang, T.

  • Author_Institution
    Stanford Linear Accel. Center, Menlo Park, CA
  • fYear
    2008
  • fDate
    27-31 May 2008
  • Firstpage
    120
  • Lastpage
    123
  • Abstract
    The ILC Marx Modulator is under development as a lower cost alternative to the "Baseline Conceptual Design" (BCD) klystron modulator. Construction of a prototype Marx is complete and testing is underway at SLAC. The Marx employs solid state elements, IGBTs and diodes, to control the charge, discharge and isolation of the modules. The prototype is based on a stack of sixteen modules, each initially charged to ~11 kV, which are arranged in a Marx topology. Initially, eleven modules combine to produce the 120 kV output pulse. The remaining modules are switched in after appropriate delays to compensate for the voltage droop that results from the discharge of the energy storage capacitors. Additional elements will further regulate the output voltage to plusmn0.5%. The Marx presents several advantages over the conventional klystron modulator designs. It is physically smaller; there is no pulse transformer (quite massive at these parameters) and the energy storage capacitor bank is quite small, owing to the active droop compensation. It is oil-free; voltage hold-off is achieved using air insulation. It is air cooled; the secondary air-water heat exchanger is physically isolated from the electronic components. This paper outlines the current developmental status of the prototype Marx. It presents a detailed electrical and mechanical description of the modulator and operational test results. It will discuss electrical efficiency measurements, fault testing, and output voltage regulation.
  • Keywords
    linear colliders; mixers (circuits); modulators; Marx modulator; baseline conceptual design; international linear collider; Capacitors; Costs; Diodes; Energy storage; Insulated gate bipolar transistors; Klystrons; Prototypes; Solid state circuits; Testing; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008
  • Conference_Location
    Las Vegas, NE
  • Print_ISBN
    978-1-4244-1534-2
  • Electronic_ISBN
    978-1-4244-1535-9
  • Type

    conf

  • DOI
    10.1109/IPMC.2008.4743594
  • Filename
    4743594