Title :
Low-noise, high-speed avalanche photodiodes
Author :
Campbell, Joe C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
This paper describes improvements in the noise characteristics and the gain-bandwidth products that have been achieved with thin multiplication regions that incorporate new materials and impact ionization engineering with beneficially designed heterostructures.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; impact ionisation; indium compounds; optical noise; gain-bandwidth products; heterostructures; impact ionization engineering; low-noise high-speed avalanche photodiodes; materials; multiplication regions; noise characteristics; Absorption; Avalanche photodiodes; Bandwidth; Impact ionization; Noise reduction; Optical devices; Optical noise; Optical waveguides; PIN photodiodes; Resonance;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036354
