High power 1550 nm twin-photodetector modules with 45 GHz bandwidth based on InP

Author

Beling, Andreas ; Schmidt, Dan ; Bach, H.-G. ; Mekonnen, G.G. ; Ziegler, R. ; Stollberg, Michael ; Jacumeit, G. ; Gottwald, Erich ; Weiske, C.-J.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

2002

fDate

17-22 Mar 2002

Firstpage

274

Lastpage

276

Abstract

In summary we fabricated and characterized integrated differential photodetector modules with 35 GHz and 45 GHz electrical bandwidth. The devices show total responsivities of 0.41 A/W and 0.31 A/W respectively and PDL of less than 0.5 dB. The ratio of the photocurrents remains below 0.5 dB for different states of polarization demonstrating an excellent electrical and optical symmetry. The modules deliver high electrical output pulses of differential polarity in the 1 Volt regime to switch directly all known 40 Gbit/s demux electronics implemented in SiGe, GaAs or InP technology.

Keywords

III-V semiconductors; demultiplexing; indium compounds; infrared detectors; integrated optics; light polarisation; modules; optical communication equipment; 1550 nm; 35 GHz; 40 Gbit/s; 45 GHz; GHz electrical bandwidth; GaAs; IR detectors; InP; PDL; SiGe; demux electronics; differential polarity; high electrical output pulses; high power 1550 nm twin-photodetector modules; integrated differential photodetector modules; modules; photocurrents; polarization states; total responsivities; Bandwidth; Germanium silicon alloys; Indium phosphide; Optical polarization; Optical pulses; Optical switches; Page description languages; Photoconductivity; Photodetectors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036357

Filename

1036357