Title :
A 20 K GaAs array with 10 K of embedded SRAM
Author :
Hinds, Russell ; Canaga, Shelly ; Lee, Gary ; Choudhury, Ashish
Author_Institution :
Vitesse Semicond. Corp., Camarillo, CA, USA
Abstract :
A 20000-gate GaAs array which has been combined with 10 K of embedded SRAM is described. The chip is fabricated with Vitesse Semiconductor Corporation´s self-aligned gate, 11 mask, GaAs E/D MESFET process. The gate array consists of user-configurable macrocells, tailored for DCFL logic with a special low-power, high-drive capability. The I/O can be personalized for ECL, TTL, or GaAs levels. There are 392 pads on the 13.8×7.7 mm die with a maximum of 256 used for signal I/O. The RAM array is packaged in a multilayer ceramic, 344-pin leaded chip carrier. Typical power dissipation is 14 W. The 10 K of RAM consists of eight separate RAM macros. Each RAM macro is organized as a 256-b×5-b RAM. The RAMs are fully registered with a minimum cycle time of 3.5 ns. The RAM features a scan mode that can be used to configure the registers into a serial shifter. There is also a RAM test mode which allows independent functional and speed testing of all 8 RAMs, easing the task of RAM verification for a given user personalization
Keywords :
III-V semiconductors; SRAM chips; Schottky gate field effect transistors; cellular arrays; field effect integrated circuits; gallium arsenide; integrated circuit testing; logic arrays; 10 kbit; 14 W; 3.5 ns; DCFL logic; E/D MESFET process; GaAs array; RAM test mode; Vitesse Semiconductor; embedded SRAM; functional testing; gate array; leaded chip carrier; minimum cycle time; multilayer ceramic; power dissipation; scan mode; self-aligned gate; serial shifter; speed testing; static RAM; user-configurable macrocells; Ceramics; Gallium arsenide; Logic arrays; MESFETs; Macrocell networks; Nonhomogeneous media; Packaging; Power dissipation; Random access memory; Testing;
Conference_Titel :
Custom Integrated Circuits Conference, 1990., Proceedings of the IEEE 1990
Conference_Location :
Boston, MA
DOI :
10.1109/CICC.1990.124660
