DocumentCode :
2302305
Title :
A New Simulation Method for NBTI Analysis in SPICE Environment
Author :
Vattikonda, Rakesh ; Luo, Yansheng ; Gyure, Alex ; Qi, Xiaoning ; Lo, Sam ; Shahram, Mahmoud ; Cao, Yu ; Singhal, Kishore ; Toffolon, Dino
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fYear :
2007
fDate :
26-28 March 2007
Firstpage :
41
Lastpage :
46
Abstract :
This paper presents a simulation framework for reliability analysis of circuits in the SPICE environment. The framework incorporates the degradation of physical parameters such as threshold voltage (Vtp) into circuit simulation and enables the design of highly reliable circuits. The parameter degradation is based on the numerical solution for the reaction-diffusion (R-D) mechanism, which is a general model applicable to various reliability effects such as NBTI, HCI, NCS, and SEE. In particular, the accuracy and efficiency of this method was verified for NBTI degradation with 130nm experimental and simulation data over a wide range of stress voltages and temperature. The model also accurately captures the dependence of NBTI on multiple diffusion species (H/H2), key process (Vth, tox) and environmental parameters (VDD, temperature). The circuit level performance of this method is verified with silicon data from ring-oscillator circuit. We also investigated the predicted impact of NBTI on representative digital circuits
Keywords :
SPICE; circuit simulation; integrated circuit reliability; 130 nm; NBTI analysis; SPICE environment; circuit level performance; circuit simulation; multiple diffusion species; parameter degradation; reaction diffusion mechanism; reliability analysis; ring oscillator circuit; threshold voltage; Analytical models; Circuit analysis; Circuit simulation; Degradation; Human computer interaction; Niobium compounds; SPICE; Stress; Threshold voltage; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-2795-7
Type :
conf
DOI :
10.1109/ISQED.2007.21
Filename :
4149009
Link To Document :
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