DocumentCode :
2302321
Title :
Model Of Plasma Immersion Ion Implantation For Voltage Pulses With Finite Rise- And Fall-times
Author :
Stewart, R.A. ; Lieberman, M.A.
Author_Institution :
University of California
fYear :
1991
fDate :
3-5 June 1991
Firstpage :
118
Lastpage :
118
Keywords :
Current density; Fabrication; Ion implantation; Numerical simulation; Plasma applications; Plasma density; Plasma immersion ion implantation; Semiconductor devices; Ultra large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1991. IEEE Conference Record - Abstracts., 1991 IEEE International Conference on
Conference_Location :
Williamsburg, VA, USA
Print_ISBN :
0-7803-0147-1
Type :
conf
DOI :
10.1109/PLASMA.1991.695536
Filename :
695536
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2302321
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