Title :
Low power consumption and highly reliable 1060 nm VCSELs for parallel optical interconnection
Author :
Tsukiji, Naoki ; Imai, Suguru ; Takaki, Keishi ; Shimizu, Hitoshi ; Kawakita, Yasumasa ; Takagi, Tomohiro ; Hiraiwa, Koji ; Yoshida, Junji ; Shimizu, Hiroshi ; Kasukawa, Akihiko
Author_Institution :
Photonic Device Res. Center, Furukawa Electr. Co., Ltd., Chiba, Japan
Abstract :
1060nm VCSELs with InGaAs/GaAs strained quantum wells have been reviewed in terms of power consumption and reliability. Clear eye opening was confirmed at 10Gbps with bias current of as low as 1.4mA.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser reliability; optical interconnections; optical transmitters; power consumption; quantum well lasers; surface emitting lasers; InGaAs-GaAs; VCSEL; bit rate 10 Gbit/s; current 1.4 mA; eye opening; laser reliability; parallel optical interconnection; power consumption; strained quantum wells; wavelength 1060 nm;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698849
