DocumentCode :
2302637
Title :
Cross Layer Error Exploitation for Aggressive Voltage Scaling
Author :
Djahromi, Amin Khajeh ; Eltawil, Ahmed M. ; Kurdahi, Fadi J. ; Kanj, Rouwaida
Author_Institution :
UC, Irvine , CA
fYear :
2007
fDate :
26-28 March 2007
Firstpage :
192
Lastpage :
197
Abstract :
This paper shows that by co-designing circuits and systems, considerable power savings are possible if the inherent data redundancy of candidate systems such as wireless is used to compensate for hardware failures. A comprehensive study of 6T SRAM failure modes is presented. The generated statistics are used to quantify a power savings of up to 17.5% for a case study of a 32 nm CMOS 3 GPP WCDMA modem
Keywords :
CMOS integrated circuits; SRAM chips; logic design; low-power electronics; 32 nm; 6T SRAM failure modes; CMOS 3 GPP WCDMA modem; aggressive voltage scaling; cross layer error exploitation; data redundancy; hardware failures; Circuits and systems; Cross layer design; Hardware; Modems; Multiaccess communication; Power generation; Random access memory; Redundancy; Statistics; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-2795-7
Type :
conf
DOI :
10.1109/ISQED.2007.53
Filename :
4149033
Link To Document :
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