Title :
High-gain Si-chip optical parametric mixing beyond two-photon absorption
Author :
Green, William M J ; Liu, Xiaoping ; Osgood, Richard M., Jr. ; Vlasov, Yurii A.
Author_Institution :
BM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A broadband silicon mid-infrared optical parametric amplifier operating near λ=2200nm, exhibiting maximum gain >;25dB, and net off-chip gain >;13dB, is presented. Broadband cascaded four-wave-mixing spanning a 500nm spectrum is facilitated by large on-chip gain.
Keywords :
elemental semiconductors; integrated optics; multiwave mixing; optical parametric amplifiers; photoexcitation; silicon; two-photon processes; Si; broadband cascaded four-wave-mixing; broadband silicon midinfrared optical parametric amplifier; high-gain Si-chip optical parametric mixing; off-chip gain; two-photon absorption; wavelength 2200 nm; wavelength 500 nm;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698856
