• DocumentCode
    2302736
  • Title

    Charge Recycling Between Virtual Power and Ground Lines for Low Energy MTCMOS

  • Author

    Liu, Zhiyu ; Kursun, Volkan

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
  • fYear
    2007
  • fDate
    26-28 March 2007
  • Firstpage
    239
  • Lastpage
    244
  • Abstract
    Multi-threshold voltage CMOS (MTCMOS) has emerged as an increasingly popular technique for reducing the leakage energy consumption of idle circuits. The MTCMOS circuits, however, suffer from high energy overhead during the transitions between the active and standby modes. A new circuit technique is proposed in this paper to lower the energy overhead of these mode transitions for effective energy reduction with the MTCMOS circuits. The charge stored at the "virtual power" and "virtual ground" lines are recycled during the active-to-sleep-to-active mode transitions with the proposed technique. Applying the charge recycling MTCMOS circuit technique to a 32-bit Brent-Kung adder reduces the energy overhead due to the mode transitions by up to 36.3% as compared to the conventional MTCMOS circuits. Furthermore, the standby mode power consumption is reduced by up to 91.1% as compared to a standard Brent-Kung adder in a 65nm CMOS technology
  • Keywords
    CMOS integrated circuits; adders; integrated circuit design; leakage currents; low-power electronics; 32 bit; Brent-Kung adder; charge recycling; gated ground; gated power; ground lines; low energy MTCMOS; multithreshold voltage CMOS; sleep switch; subthreshold leakage; virtual power; Adders; CMOS technology; Energy consumption; Leakage current; Parasitic capacitance; Recycling; Subthreshold current; Switches; Switching circuits; Threshold voltage; Multi-threshold voltage CMOS; charge recycling; gated ground; gated power; sleep switch; subthreshold leakage.;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7695-2795-7
  • Type

    conf

  • DOI
    10.1109/ISQED.2007.47
  • Filename
    4149041