Title :
Tests on Symmetry and Continuity between BSIM4 and BSIM5
Author :
Niu, Xudong ; Song, Yan ; Li, Bo ; Bian, Wei ; Tao, Yadong ; Liu, Feng ; Hu, Jinhua ; Chen, Yu ; He, Frank
Author_Institution :
Sch. of Comput. & Inf. Eng., Peking Univ., Shenzhen
Abstract :
This paper presents the test results on the CMOS model symmetry and continuity characteristics between BSIM4 and BSIM5 from University of California at Berkeley. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while new generation BSIM MOSFET compact model, BSIM5, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design
Keywords :
BSI standards; CMOS analogue integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; BSIM MOSFET compact model; BSIM4; BSIM5; Berkeley; CMOS model symmetry; RF circuit design; University of California; analog circuit design; industry standard model; Analog circuits; Circuit simulation; Circuit synthesis; Circuit testing; Electronics industry; Equations; MOSFET circuits; Physics; Radio frequency; Semiconductor device modeling; BSIM4; BSIM5; CMOS circuit design; compact model; continuity; symmetry.;
Conference_Titel :
Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-2795-7
DOI :
10.1109/ISQED.2007.157
