Title :
Characterization of Power Insulated-Gate Bipolar Transistors to Create a SPICE Model for Pulsed Power Applications
Author :
VanGordon, J.A. ; Kovaleski, S.D. ; Dale, G.E.
Author_Institution :
Electr. & Comput. Eng., Univ. of Missouri, Columbia, MO
Abstract :
Power insulated gate bipolar transistors (IGBTs) are frequently used in pulsed power applications. While published data is readily available for most IGBTs under steady-state conditions, little information is known for a given IGBT regarding pulsed power conditions. This paper presents a characterization process of power IGBTs for creating IGBT SPICE models. Each IGBT will be subjected to single 5 mus pulses at 4.5 kV and 1 kA. During the pulse, characteristics such as rise time, fall time, maximum collector current, and maximum collector-emitter voltage will be measured. Additionally, the effects of the gate drive with respect to the collector-emitter characteristics will be observed. This process will be demonstrated with the IXYS IXEL40N400 and the Powerex QIS4506001 IGBTs to allow for circuit simulations with these models as circuit elements.
Keywords :
SPICE; bipolar transistor circuits; insulated gate bipolar transistors; pulsed power technology; SPICE model; fall time; maximum collector current; maximum collector emitter voltage; power insulated gate bipolar transistors; pulsed power applications; steady state conditions; Application software; Capacitors; Circuit simulation; Circuit testing; Insulated gate bipolar transistors; Insulation; Resistors; SPICE; Switches; Voltage;
Conference_Titel :
IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008
Conference_Location :
Las Vegas, NE
Print_ISBN :
978-1-4244-1534-2
Electronic_ISBN :
978-1-4244-1535-9
DOI :
10.1109/IPMC.2008.4743659
