DocumentCode
2302895
Title
High Current, High DI/DT, Solid State Switch Resistance Model
Author
Sanders, Howard D. ; Glidden, Steven C.
Author_Institution
Appl. Pulsed Power, Inc., Freeville, NY
fYear
2008
fDate
27-31 May 2008
Firstpage
366
Lastpage
368
Abstract
The efficiency of a solid state switch used in short pulse applications is determined by how rapidly the effective resistance decreases during turn-on. Applied Pulsed Power has examined the resistance fall for our high current, high di/dt, solid state switches and produced a useful model for the resistance versus time under various operating conditions. The model covers voltages up to 48 kV, currents up to 8 kA, di/dt up to 75 kA/mus, and pulse widths up to 1 mus. It has been implemented in SPICE circuit simulations, and using the SPICE model, the efficiency of the switch in different applications can be predicted. This paper will present data examining actual resistance measurements compared to the SPICE circuit simulations and discuss the solid state physics involved in the model.
Keywords
pulsed power switches; SPICE circuit simulations; pulsed power; solid state switch resistance model; Circuit simulation; Electrical resistance measurement; Predictive models; SPICE; Solid modeling; Solid state circuits; Space vector pulse width modulation; Switches; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008
Conference_Location
Las Vegas, NE
Print_ISBN
978-1-4244-1534-2
Electronic_ISBN
978-1-4244-1535-9
Type
conf
DOI
10.1109/IPMC.2008.4743660
Filename
4743660
Link To Document