DocumentCode
2302977
Title
InGaAs self-assembly quantum-dot monolithic integration of Semiconductor optical amplifier and electroabsorption modulator
Author
Lin, Chuan-Han ; Wu, Jui-Pin ; Kuo, Yu-zheng ; Wu, Tsu-Hsiu ; Chiu, Yi-Jen ; Tzeng, T.E. ; Lay, T.S.
Author_Institution
Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
285
Lastpage
286
Abstract
A monolithically SOA-integrated EAM using InGaAs self-assembly quantum dot has been demonstrated for the first time. By integrating 300μm long EAM with 375μm long SOA, 3.5dB extinction ratio driven by 6V with 3dB optical gain are obtained, indicating a great potential for high-efficient modulation.
Keywords
III-V semiconductors; amplification; electro-optical modulation; gallium arsenide; indium compounds; self-assembly; semiconductor optical amplifiers; semiconductor quantum dots; InGaAs; electroabsorption modulator; optical gain; quantum dot monolithic integration; self-assembly; semiconductor optical amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5698871
Filename
5698871
Link To Document