Title :
Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
Author :
Sari, Emre ; Akyuz, Ozgun ; Choi, Eun-Geun ; Lee, In-Hwan ; Baek, Jong Hyeob ; Demir, Hilmi Volkan
Author_Institution :
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Abstract :
Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures are reported. The epi-sample with 4 μm mask and growth window widths yielded the hightest PL peak intensity with the narrowest spectrum.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; masks; optical films; optical materials; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; spectral line breadth; wide band gap semiconductors; InGaN-GaN; MOCVD; PL peak intensity; epitaxially-laterally-overgrown quantum heterostructures; metal organic chemical vapor deposition; photoluminescence; photomask; size 4 mum; spectrum width;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698873
