DocumentCode
2303124
Title
A High Frequency PWM Controller in HV Bi-CMOS Process Considering SOI Self-Heating
Author
Singh, Gautam Kumar ; Panierahi, S.K.
Author_Institution
Pulsecore Semicond. Pvt. Ltd., Bangalore
fYear
2007
fDate
26-28 March 2007
Firstpage
392
Lastpage
397
Abstract
A companion analysis of self-heating effect (SHE) in HV-BiCMOS SOI degradation of circuit performance and impact on long term reliability because of SHE is presented. Band-gap voltage and output impedance degradation due to SOI self-heating are discussed. Also an efficient scheme for designing long term reliable pulse width modulation (PWM) controller has been discussed along with silicon and reliability test results
Keywords
BiCMOS integrated circuits; PWM power convertors; heating; integrated circuit reliability; power integrated circuits; silicon-on-insulator; BiCMOS process; output impedance degradation; pulse width modulation controller; self-heating effect; silicon-in-insulator; Circuit optimization; Degradation; Frequency; Impedance; Performance analysis; Photonic band gap; Pulse width modulation; Silicon; Space vector pulse width modulation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
0-7695-2795-7
Type
conf
DOI
10.1109/ISQED.2007.13
Filename
4149067
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