DocumentCode :
2303130
Title :
Design of reliable a-Si:H gate driver circuit with high immunity against the vth shift of tft and output fluctuations
Author :
Chuang, Min-Chin ; Tu, Chun-Da ; Chou, Kuan-Wen ; Lin, Chih-Lung
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
305
Lastpage :
306
Abstract :
AC-driving structure is utilized in this new gate driver circuit to suppress VTH shift of a-Si:H TFT. By modulating the biased-stress on pull-down TFT, the floating row lines of panels is effectively eliminated. The results depict this circuit can ensure the longer operating lifetime.
Keywords :
amorphous semiconductors; driver circuits; elemental semiconductors; hydrogen; silicon; thin film transistors; AC-driving structure; Si:H; TFT; biased stress; floating row lines; gate driver circuit; immunity; output fluctuations; threshold voltage shift;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698881
Filename :
5698881
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2303130
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