DocumentCode
2303165
Title
In-situ wavelength aging study and reliability thermal model of C-band 100mW high-power DWDM lasers
Author
Huang, Jia-Sheng ; Isip, Eric ; Carson, Richard F.
Author_Institution
Broadband Div., Emcore, Alhambra, CA, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
538
Lastpage
539
Abstract
We study the wavelength aging behavior of 100mW high-power semiconductor lasers. Using in-situ high-resolution wavelength measurement, the activation energy is determined to be 0.96eV based on the wavelength aging data. Physical model of the aging behavior is discussed.
Keywords
III-V semiconductors; ageing; indium compounds; laser reliability; selenium; semiconductor lasers; wavelength division multiplexing; wide band gap semiconductors; C-band high-power DWDM semiconductor lasers; InP:Se; activation energy; aging behavior; dense wavelength-division multiplex lasers; in-situ high-resolution wavelength measurement; physical model; power 100 mW; reliability thermal model; Aging; Fiber lasers; Laser modes; Measurement by laser beam; Power lasers; Reliability; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358731
Filename
6358731
Link To Document