DocumentCode
2303167
Title
Investigating the environmental stability of Li-doped ZnO based thin film transistors by two dimensional numerical simulations
Author
Gupta, Dipti ; Jang, Jongsu ; Nayak, P.K. ; Hong, Yongtaek
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
309
Lastpage
310
Abstract
We investigate effect of Li-doping upon environmental stability of ZnO TFTs by two dimensional simulations. TFTs modelled with acceptor like tail states and deep donor Gaussian defects obtained a good agreement with the experimental data.
Keywords
Gaussian processes; II-VI semiconductors; deep levels; environmental degradation; impurity states; lithium; semiconductor device models; semiconductor device reliability; semiconductor doping; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; TFT; ZnO:Li; deep donor Gaussian defects; doping effect; environmental stability; thin film transistors; two dimensional numerical simulation; Li-doped ZnO; Thin film transistor; device simulation; environment stability;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5698883
Filename
5698883
Link To Document