Author :
Seo, K.-I. ; Haran, B. ; Gupta, Deepika ; Guo, Di ; Standaert, T. ; Xie, R. ; Shang, H. ; Alptekin, E. ; Bae, D.-I. ; Bae, G. ; Boye, C. ; Cai, H. ; Chanemougame, D. ; Chao, Roger ; Cheng, K. ; Cho, Jeon-Wook ; Choi, Kwonhue ; Hamieh, B. ; Hong, J.G. ; Ho
Abstract :
A 10nm logic platform technology is presented for low power and high performance application with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrate. A 0.053um2 SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at 0.75V. Intensive multi-patterning technology and various self-aligned processes have been developed with 193i lithography to overcome optical patterning limit. Multi-workfunction (WF) gate stack has been enabled to provide Vt tunability without the variability degradation induced by channel dopants.
Keywords :
MOSFET; SRAM chips; lithography; low-power electronics; metallisation; silicon-on-insulator; FINFET devices; SRAM bit cell; contacted poly pitch; metallization pitch; multi workfunction gate stack; optical patterning limit; size 10 nm; size 48 nm; size 64 nm; static noise margin; voltage 0.75 V; voltage 140 mV; CMOS integrated circuits; FinFETs; Logic gates; Metals; Random access memory; Substrates; Very large scale integration;
