Title :
Low-threshold 1.3-μm AlGaInAs buried heterostructure laser diodes for 85°C, 10-Gb/s operation
Author :
Okuda, T. ; Ko, H. ; Ohsawa, Y. ; Tsuruoka, K. ; Terakado, T. ; Kurihara, K. ; Gomyo, A. ; Nakamura, T. ; Kobayashi, K.
Author_Institution :
Photonic & Wireless Device Res. Labs., NEC Corp., Shiga, Japan
Abstract :
1.3-μm AlGaInAs MQW BH laser diodes were fabricated by using an improved all-selective MOVPE developed for materials containing Al. Threshold currents as low as 9.0 mA and operation currents below 55 mA for a 10-mW output power at 85°C were obtained in 250-μm-cavity-length lasers whose front and rear facet reflectivities were respectively 30% and 95%. This is the first time that a relaxation oscillation frequency over 10 GHz and 10-Gb/s direct modulation were obtained at 85°C when using AlGaInAs BH laser diodes.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; optical transmitters; quantum well lasers; reflectivity; vapour phase epitaxial growth; 1.3 micron; 10 GHz; 10 Gbit/s; 10 mW; 250 micron; 55 mA; 85 degC; 9.0 mA; AlGaInAs; AlGaInAs MQW BH laser diodes; Gb/s operation; all-selective MOVPE; direct modulation; front facet reflectivities; low-threshold 1.3-μm AlGaInAs buried heterostructure laser diodes; operation currents; output power; rear facet reflectivities; relaxation oscillation frequency; threshold currents; Diode lasers; Epitaxial growth; Epitaxial layers; Frequency; Optical materials; Power generation; Power lasers; Quantum well devices; Reflectivity; Threshold current;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036457
