Title :
Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s
Author :
Shin, C.-S. ; Park, W.-K. ; Shin, S.H. ; Cho, Y.D. ; Ko, D.H. ; Kim, Tae-Woo ; Koh, D.H. ; Kwon, Hyuck M. ; Hill, R.J.W. ; Kirsch, P. ; Maszara, W. ; Kim, Do-Hyeon
Author_Institution :
KANC, Suwon, South Korea
Abstract :
This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm_max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
Keywords :
MOCVD; MOSFET; aluminium compounds; electrostatics; gallium compounds; hafnium compounds; indium compounds; Al2O3-HfO2; DIBL; EOT; GL process; In0.7Ga0.3As; MOCVD; SS; carrier transport; electrostatic integrity; long-channel devices; low gate stack; record performance; regrown S-D gate-last QW MOSFET; short-channel device; size 100 nm; size 40 nm; Aluminum oxide; Hafnium compounds; Indium gallium arsenide; Logic gates; MOCVD; MOSFET; Surface treatment;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894351
