A high-density logic CMOS process compatible non-volatile memory for sub-28nm technologies

Various product applications bring up with increasing demands of logic NVM IP in advanced technology nodes. Encryption, security, functionality, and identification setting become indispensable in communication and high-end consumer electronics. A non-volatile memory cell, using anti-fuse programming mechanism to achieve high density and excellent data storage lifetime, is proposed. The unique cell design and operation scheme realize low programming-inhibit leakage current, fast program speed, and robust data retention. The memory macro is successfully demonstrated for one-time and multi-time programming applications with its full compatibility to sub-28nm and FinFET processes.