Off Stoichiometric Silicon Oxide Applied to Enhance the Silicon Responsivity up to UV Region

Author

Aceves-Mijares, M. ; Berman, D. ; Berriel, L.R. ; Domínguez, C. ; Morales, A. ; Pedraza, J.

Author_Institution

INAOE, Puebla

fYear

2007

fDate

14-20 Oct. 2007

Firstpage

42

Lastpage

45

Abstract

Silicon Rich Oxide (SRO) is a material compatible with silicon integrated technology, besides it has photoluminescentproperties. When SRO is illuminated with UV radiation emission in the range of 600 to 800 nm take place. This radiation has been applied to a silicon PN junction in order to expand the capabilities of silicon improving its detection properties. In this work a more precise characterization of a sensor made of silicon and SRO is done. The response of this sensor goes from 200 nm to standard Si detection range, and in the range of 200 to 400 nm it increases with the wavelength.

Keywords

photoluminescence; silicon compounds; ultraviolet detectors; UV radiation; UV region; off stoichiometric silicon oxide; photoluminescent property; sensor; silicon integrated technology; silicon responsivity; silicon rich oxide; wavelength 200 nm to 400 nm; wavelength 600 nm to 800 nm; Electronic circuits; Infrared detectors; Integrated circuit technology; Nanocrystals; Photoelectricity; Photonic band gap; Power generation economics; Radiation detectors; Sensor phenomena and characterization; Silicon radiation detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensor Technologies and Applications, 2007. SensorComm 2007. International Conference on

Conference_Location

Valencia

Print_ISBN

978-0-7695-2988-2

Type

conf

DOI

10.1109/SENSORCOMM.2007.4394895

Filename

4394895