Title :
Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond
Author :
Ando, Takehiro ; Kannan, B. ; Kwon, Uihui ; Lai, W.L. ; Linder, B.P. ; Cartier, E.A. ; Haight, Richard ; Copel, M. ; Bruley, J. ; Krishnan, S.A. ; Narayanan, Vijaykrishnan
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We demonstrate a Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate (RMG) technology, which uses only thin TiN layers as workfunction (WF)-setting metals for CMOS integration. The SIGMA stack provides 100× PBTI lifetime improvement via band alignment engineering. Moreover, the SIGMA stack enables 9nm more gate length (Lg) scaling compared to the conventional stack with matched gate resistance and thus opens up pathways for aggressive Lg scaling toward the 14nm node and beyond.
Keywords :
CMOS integrated circuits; MOSFET; scaling circuits; titanium compounds; work function; CMOS integration; FinFET replacement metal gate; PBTI lifetime improvement; RMG technology; SIGMA stack; WF-setting metals; band alignment engineering; gate length scaling; matched gate resistance; simple gate metal anneal stack; size 14 nm; size 9 nm; thin layers; workfunction-setting metals; Annealing; CMOS integrated circuits; FinFETs; Logic gates; Resistance; Tin;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894358
