Title :
Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Author :
Ragnarsson, Lars-Ake ; Chew, Soon Aik ; Dekkers, H. ; Luque, M.T. ; Parvais, B. ; De Keersgieter, An ; Devriendt, Katia ; Van Ammel, A. ; Schram, T. ; Yoshida, Norihiro ; Phatak, A. ; Han, Kwangseok ; Colombeau, B. ; Brand, A. ; Horiguchi, Naoto ; Thean,
Author_Institution :
imec, Leuven, Belgium
Abstract :
A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ~400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack Tinv, JG, DIT and reliability as well as the device performance are shown to be unaffected by the multi VT process.
Keywords :
CMOS integrated circuits; MOSFET; atomic layer deposition; integrated circuit reliability; ion implantation; semiconductor device reliability; titanium compounds; RMG CMOS integration process; TiN-TiAl-TiN; bottom-barrier thickness control; conductive metal gate stack tuning; conformal ALD; eWF; effective work function; highly scalable bulk FinFET device; nitrogen implantation; reliability; replacement metal gate process; scalable multiVT option; size 10 nm; work function metal; Doping; FinFETs; Implants; Logic gates; Nitrogen; Tin;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894359
