Title :
III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices
Author :
Razeghi, M. ; Bayram, C. ; Vashaei, Z. ; Cicek, E. ; McClintock, R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Abstract :
III-nitride optoelectronic devices are discussed. Ultraviolet detectors and visible emitters towards terahertz intersubband devices are reported. Demonstration of single photon detection efficiencies of 33% in the ultraviolet regime, intersubband energy levels as low as in the mid-infrared regime, and GaN-based resonant tunneling diodes with negative resistance of 67 Ω are demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared detectors; integrated optoelectronics; microwave photonics; photodetectors; resonant tunnelling diodes; terahertz wave detectors; ultraviolet detectors; wide band gap semiconductors; AlGaInN; GaN; Ill-nitride optoelectronic devices; efficiency 33 percent; energy levels; midinfrared detection; negative resistance; resonant tunneling diodes; single photon detection; terahertz intersubband devices; ultraviolet detectors; visible emitters;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698904
