Author :
Mertens, Hans ; Ritzenthaler, R. ; Hikavyy, Andriy ; Franco, Jacopo ; Lee, Jae W. ; Brunco, D.P. ; Eneman, Geert ; Witters, L. ; Mitard, J. ; Kubicek, S. ; Devriendt, Katia ; Tsvetanova, Diana ; Milenin, A.P. ; Vrancken, C. ; Geypen, J. ; Bender, Hugo ; G
Abstract :
We present a comprehensive study of Si0.55Ge0.45-cladded p-channel FinFETs, including a comparison with planar SiGe quantum-well devices. The SiGe-cladded FinFETs exhibit ~2× higher hole mobility, ~2× better ION/IOFF, and improved DIBL compared to Si control devices. Superior NBTI reliability over equivalent Si FinFETs is demonstrated for cladding thicknesses down to 3 nm. The dependencies of drive current and hole mobility on both SiGe thickness and device width are examined in detail. This analysis shows that SiGe thickness conformality and epitaxial facet control are crucial for the optimization of SiGe-cladded FinFETs.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; negative bias temperature instability; semiconductor device reliability; NBTI reliability; Si0.55Ge0.45; cladding thickness; device width; drive current; epitaxial cladding; epitaxial facet control; high-mobility p-channel FinFET; hole mobility; planar quantum-well devices; Epitaxial growth; FinFETs; Logic gates; Semiconductor device reliability; Silicon; Silicon germanium;
