Title :
III–V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3/GaAs interface
Author :
Dong, Lixin ; Wang, X.W. ; Zhang, J.Y. ; Li, X.F. ; Lou, X.B. ; Conrad, N. ; Wu, Huwei ; Gordon, Roy G. ; Ye, Peide D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
By realizing a high-quality epitaxial La2O3/ GaAs(111)A interface, we demonstrate GaAs CMOS devices and integrated circuits including nMOSFETs, pMOSFETs, CMOS inverters, NAND and NOR logic gates and five-stage ring oscillators for the first time. As an exercise of III-V CMOS circuits on a common substrate with a common gate dielectric, it provides a route to realize ultimate high-mobility CMOS on Si if long-time expected breakthroughs of III-V epi-growth on Si occur.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; atomic layer epitaxial growth; gallium arsenide; invertors; lanthanum compounds; logic gates; CMOS inverters; GaAs CMOS devices; III-V CMOS circuits; III-V CMOS devices; III-V epi-growth; La2O3-GaAs; NAND logic gates; NOR logic gates; common gate dielectric; common substrate; five-stage ring oscillators; high-quality atomic-layer-epitaxial interface; nMOSFET; pMOSFET; CMOS integrated circuits; Epitaxial growth; Gallium arsenide; Inverters; Logic gates; MOSFET; MOSFET circuits;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894361
