Record Ion (0.50 mA/µm at VDD = 0.5 V and Ioff = 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs

We report MOSFETs with 25-nm gate length (L_g), extremely thin 2.5 nm InAs channels and 0.7/3.0 nm (physical) Al₂O_xN_y/ZrO₂ gate dielectrics, and 12 nm In_0.53Ga_0.47As vertical spacers in the raised epitaxial source/drain. The FETs establish key new DC performance records, at VLSI-relevant gate lengths (25 nm), including 0.50 mA/μm on-current (at 100 nA/μm I_off and 0.5 V V_DD) and 77 mV/dec. subthreshold swing (SS) at V_DS=0.5 V. At 1 μm L_g and V_DS=0.1 V, the minimum subthreshold swing is 61 mV/dec., a record low for InAs/InGaAs, indicating high interface quality.