Verification on the extreme scalability of STT-MRAM without loss of thermal stability below 15 nm MTJ cell

Author

Ju Hyun Kim ; Lim, W.C. ; Pi, U.H. ; Lee, Jang M. ; Kim, W.K. ; Kim, Ji H. ; Kim, Kwan Weon ; Park, Y.S. ; Park, Sang Ho ; Kang, M.A. ; Kim, You Ho ; Kim, W.J. ; Kim, Soo Youn ; Park, Jae Hyo ; Lee, S.C. ; Lee, Y.J. ; Yoon, J.M. ; Oh, S.C. ; Park, S.O. ;

Author_Institution

Process Dev. Team, Samsung Electron. Co. Ltd., Hwasung, South Korea

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

Scalability of interface driven perpendicular magnetic anisotropy (i-PMA) magnetic tunnel junctions (MTJs) has been improved down to 1X node which verifies STT-MRAM for future standalone memory. With developing a novel damage-less MTJ patterning process, robust magnetic and electrical performances of i-PMA MTJ cell down to 15 nm node could be achieved.

Keywords

MRAM devices; magnetic anisotropy; magnetic tunnelling; magnetoelectronics; STT-MRAM; damage-less MTJ patterning process; i-PMA MTJ cell; interface driven perpendicular magnetic anisotropy; magnetic tunnel junctions; size 15 nm; spin torque transfer; thermal stability; Magnetic switching; Magnetic tunneling; Scalability; Stability analysis; Switches; Thermal factors; Thermal stability; MRAM; switching margin; thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894366

Filename

6894366