DocumentCode
230374
Title
Comprehensive statistical investigation of STT-MRAM thermal stability
Author
Hofmann, Klaus ; Knobloch, Klaus ; Peters, C. ; Allinger, R.
Author_Institution
Infineon Technol. AG, Neubiberg, Germany
fYear
2014
fDate
9-12 June 2014
Firstpage
1
Lastpage
2
Abstract
The thermal stability Δ is a key parameter of the MRAM technology. It determines the current induced switching behavior as well as the reliability performance of e.g. data retention and read-disturb. Therefore a highly accurate assessment of Δ is mandatory for a successful MRAM technology development. In this paper we present a verification methodology based on the statistical data of a 8Mb test vehicle revealing a wide Δ distribution of ~17%.
Keywords
MRAM devices; statistical analysis; thermal stability; MRAM technology; STT-MRAM thermal stability; current induced switching behavior; data retention; reliability performance; statistical investigation; storage capacity 8 Mbit; verification methodology; Equations; Mathematical model; Resistance; Stability analysis; Switches; Temperature measurement; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location
Honolulu, HI
ISSN
0743-1562
Print_ISBN
978-1-4799-3331-0
Type
conf
DOI
10.1109/VLSIT.2014.6894367
Filename
6894367
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