Title :
Comprehensive statistical investigation of STT-MRAM thermal stability
Author :
Hofmann, Klaus ; Knobloch, Klaus ; Peters, C. ; Allinger, R.
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
Abstract :
The thermal stability Δ is a key parameter of the MRAM technology. It determines the current induced switching behavior as well as the reliability performance of e.g. data retention and read-disturb. Therefore a highly accurate assessment of Δ is mandatory for a successful MRAM technology development. In this paper we present a verification methodology based on the statistical data of a 8Mb test vehicle revealing a wide Δ distribution of ~17%.
Keywords :
MRAM devices; statistical analysis; thermal stability; MRAM technology; STT-MRAM thermal stability; current induced switching behavior; data retention; reliability performance; statistical investigation; storage capacity 8 Mbit; verification methodology; Equations; Mathematical model; Resistance; Stability analysis; Switches; Temperature measurement; Thermal stability;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894367
