Title :
A copper ReRAM cell for Storage Class Memory applications
Author :
Sills, Scott ; Yasuda, Shuhei ; Strand, Jonathan ; Calderoni, Alessandro ; Aratani, Katsuhisa ; Johnson, A. ; Ramaswamy, Nirmal
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
Abstract :
Hybrid memory systems that incorporate Storage Class Memory (SCM) as non-volatile cache or DRAM data backup are expected to bolster system efficiency and cost because SCM promises higher density than DRAM cache and higher speed than the storage I/F. This paper demonstrates a Cu-based resistive random access memory (ReRAM) cell that meets the SCM performance specifications for a 16Gb ReRAM with 200MB/s write and 1GB/s read [1].
Keywords :
DRAM chips; cache storage; copper; Cu; DRAM data backup; SCM; bolster system efficiency; copper ReRAM cell; hybrid memory systems; nonvolatile cache; resistive random access memory; storage capacity 16 Gbit; storage class memory applications; Bit error rate; Bridge circuits; Materials; Noise; Random access memory; Resistance; Switches;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894368
