Title :
Band-to-band tunneling current enhancement utilizing isoelectronic trap and its application to TFETs
Author :
Mori, Takayoshi ; Morita, Yusuke ; Miyata, Naoyuki ; Migita, S. ; Fukuda, Kenji ; Masahara, M. ; Yasuda, Toshiyuki ; Ota, Hiroyuki
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
For the first time, we propose a new ON current boosting technology for TFETs utilizing an isoelectronic trap (IET), which is formed by introducing electrically inactive impurities. We have demonstrated tunneling current enhancement by 735 times in Si-based diodes and 11 times enhancement in SOI-TFETs owing to non-thermal tunneling component by the Al-N isoelectronic impurity complex. The IET technology would be a breakthrough for ON current enhancement by a few orders in magnitude in indirect-transition semiconductors such as Si and SiGe.
Keywords :
MOSFET; electron traps; hole traps; impurities; semiconductor doping; silicon-on-insulator; tunnelling; Al-N; SOI; TFET application; band-to-band tunneling current enhancement; electrically inactive impurity; isoelectronic impurity complex; isoelectronic trap; nonthermal tunneling component; on-current boosting technology; semiconductor diode; silicon-on-insulator; tunnel field effect transistor; Boosting; Impurities; Junctions; Semiconductor diodes; Silicon; Temperature; Tunneling;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894370
