Title :
Investigation of InxGa1−xAs FinFET architecture with varying indium (x) concentration and quantum confinement
Author :
Arun, V. ; Agrawal, Nidhi ; Lavallee, Guy ; Cantoro, Mirco ; Sang-Su Kim ; Dong-Won Kim ; Datta, Soupayan
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
InxGa1-xAs FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In0.7Ga0.3As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm2/V-sec at a fin width of 38nm with highest performance. Short channel In0.7Ga0.3As QWFF (Lg=120nm) exhibits IDSAT of 1.16mA/μm at VG-VT=1V and extrinsic peak gm=1.9mS/μm at VDS=0.5V and IOFF=30 nA/μm. Components of external resistance (RExt), side wall DIT, fin profile are analyzed to investigate feasibility of InxGa1-xAs FinFET for beyond 10nm technology node.
Keywords :
III-V semiconductors; MOSFET; carrier mobility; gallium arsenide; indium compounds; quantum well devices; FinFET architecture; InxGa1-xAs; closely packed fin configuration; external resistance; field effect mobility; fin profile; quantum confinement; quantum well FinFET; short channel QWFF; size 120 nm; varying indium (x) concentration; varying indium percentage; vertical body thickness; voltage 0.5 V; FinFETs; Indium; Indium phosphide; Layout; Resistance; Silicon; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894372
