Title :
Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation
Author :
Mingshan Liu ; Genquan Han ; Yan Liu ; Chunfu Zhang ; Hongjuan Wang ; Xiangdong Li ; Jincheng Zhang ; Buwen Cheng ; Yue Hao
Author_Institution :
Wide Bandgap Semicond. Technol. Disciplines State Key Lab., Xidian Univ., Xi´an, China
Abstract :
We demonstrate high performance undoped Ge0.92Sn0.08 quantum well (QW) pMOSFETs with in situ Si2H6 passivation on (001), (011) and (111) orientations. (011) and (111)-oriented Ge0.92Sn0.08 QW pFETs achieve higher on-state current ION and effective hole mobility μeff compared to (001) devices. Ge0.92Sn0.08 (111) QW pFETs demonstrate a record high μeff of 845 cm2V-1s-1 for GeSn p-channel devices (Fig. 1). This is enabled by incorporating high biaxial compressive strain (1.43%) and eliminating dopant impurity scattering in the defect-free GeSn channel.
Keywords :
MOSFET; field effect transistors; germanium compounds; passivation; quantum well devices; silicon compounds; Ge0.92Sn0.08; Si2H6; biaxial compressive strain; dopant impurity scattering; effective hole mobility; high hole mobility; on-state current; p-channel devices; pFET; passivation; quantum well PMOSFET; Hafnium compounds; Logic gates; MOSFET; Passivation; Silicon; Strain; Substrates;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894376
