Title :
High speed and high saturation power electroabsorption modulator for analog transmission
Author :
Yu, P.K.L. ; Chang, W.S.C. ; Pappert, S.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
A high speed electroabsorption modulator (EAM) with high saturation optical power is desirable for analog fiber link applications, as the link gain increases quadratically with the optical power. EAMs with multiple-quantum-well (MQW) active layers are popular photonic applications. In this paper we also discuss the design and fabrication of the traveling wave (TW) electrode for the InGaAs QW EAM for high speed (>40 GHz) operation.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; electrodes; gallium arsenide; indium compounds; integrated optics; optical communication equipment; semiconductor quantum wells; 40 GHz; InGaAs; InGaAs QW EAM; analog fiber link applications; analog transmission; high saturation optical power; high saturation power electroabsorption modulator; multiple-quantum-well; traveling wave electrode; Absorption; Charge carrier processes; Electrons; Energy states; High speed optical techniques; Indium phosphide; Optical modulation; Optical saturation; Photonic band gap; Quantum well devices;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036496
