Highly reliable and high-power operation of 1.05 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes for pumping Tm-doped fiber amplifiers

Author

Hayakawa, Takeshi ; Kuniyasu, T. ; Matsumoto, Kaname ; Fukunaga, T.

Author_Institution

Miyanodai Technol. Dev. Center, Fuji Photo Film Co. Ltd., Kanagawa, Japan

fYear

2002

fDate

17-22 Mar 2002

Firstpage

479

Lastpage

481

Abstract

High reliability and high-power 1.05 μm highly strained InGaAs laser diodes were realized with using strain compensation for pumping TDFA. We can expect high performances similar to those of conventional 0.98 μm lasers being used for pumping EDFA since the high optical property of InGaAs quantum well can be maintained up to 1.1 μm in the present study. Higher power operation will be expected by optimizing the waveguide design and growth parameters.

Keywords

III-V semiconductors; compensation; gallium arsenide; gallium compounds; indium compounds; laser reliability; optical communication equipment; optical pumping; quantum well lasers; semiconductor device reliability; waveguide lasers; 0.98 micron; 1.05 micron; 1.1 micron; InGaAs; InGaAs laser diodes; InGaAs quantum well; InGaAs-GaAsP; InGaAs/GaAsP strain-compensated single-quantum-well laser diodes; Tm-doped fiber amplifiers; growth parameters; high optical property; high performances; high-power operation; optical pumping; strain compensation; waveguide design; Capacitive sensors; Diode lasers; Fiber lasers; High power amplifiers; Indium gallium arsenide; Laser excitation; Operational amplifiers; Optical fiber amplifiers; Optical waveguides; Pump lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036499

Filename

1036499