High performance mobile SoC design and technology co-optimization to mitigate high-K metal gate process induced variations

Despite improved device performance over traditional Poly-SiON technology, high-K metal gate flow introduces additional device variations not previously seen in Poly-SiON process, especially impacting large dimensional (WxL) devices for matching critical applications. For the first time, we report a comprehensive analysis of device variations introduced from metal gate process, GDIM and GGIM, and their sensitivity to circuit layout. Design optimization and verification mechanisms are developed to mitigate metal gate process induced variations in analog matching circuits. After co-optimization, DAC Vt mismatch is reduced by 2.1X and ADC comparator speed is improved by 23.5% in the analog blocks of an advanced mobile SoC currently in production.