• DocumentCode
    2304011
  • Title

    Low dark current Ge PIN photodiode for a high-performance, photonic BiCMOS process for radio-over-fiber applications

  • Author

    Lischke, S. ; Knoll, D. ; Zimmermann, L. ; Yamamoto, Y. ; Fraschke, M. ; Trusch, A. ; Krüger, A. ; Kroh, M. ; Tillack, B.

  • Author_Institution
    IHP, Frankfurt (Oder), Germany
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    628
  • Lastpage
    629
  • Abstract
    A waveguide coupled Ge PIN photodiode showing 0.7A/W responsivity and 13GHz optical bandwidth at a low dark current of 12mA/cm2 is presented. Its unique features facilitate integration in a high-performance, photonic BiCMOS process.
  • Keywords
    BiCMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; optical waveguides; p-i-n photodiodes; photodetectors; Ge; bandwidth 13 GHz; high-performance photonic BiCMOS process; low dark current Ge PIN photodiode; optical bandwidth; radio-over-fiber applications; waveguide coupled Ge PIN photodiode; BiCMOS integrated circuits; Dark current; Fabrication; Optical waveguides; Photodiodes; Photonics; Silicon; BiCMOS; Ge photodiode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358778
  • Filename
    6358778
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2304011