مرکز منطقه ای اطلاع رساني علوم و فناوري - Peculiarities of electrophysical properties of Bi<sub>2</sub>Te<sub>3</sub> doped with Sn

DocumentCode :

2304051

Title :

Peculiarities of electrophysical properties of Bi₂Te₃ doped with Sn

Author :

Zhitinskaya, M.K. ; Nemov, S.A. ; Svechnikova, T.E.

Author_Institution :

State Tech. Univ., St. Petersburg, Russia

fYear :

1997

fDate :

26-29 Aug 1997

Firstpage :

Lastpage :

Abstract :

The influence of doping with Sn atoms is investigated in details. The method of additional doping with electroactive impurities is used. The peculiarities of kinetic coefficients of Bi₂Te₃ doped with Sn and J simultaneously are discussed. There is good reason to believe that these peculiarities are due to Sn-resonant states

Keywords :

Hall effect; Seebeck effect; bismuth compounds; hole density; impurity states; resonant states; semiconductor doping; semiconductor materials; thermomagnetic effects; tin; Bi₂Te₃:Sn; Hall coefficient; Nernst-Ettinghausen coefficient; Seebeck coefficient; Sn doping; electroactive impurities; hole concentration; impurity states; kinetic coefficients; resonant states; Bismuth; Chemicals; Crystals; Doping; Magnetic field measurement; Resonance; Semiconductor impurities; Tellurium; Thermoelectricity; Tin;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location :

Dresden

ISSN :

1094-2734

Print_ISBN :

0-7803-4057-4

Type :

conf

DOI :

10.1109/ICT.1997.666977

Filename :

666977

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2304051