• DocumentCode
    2304051
  • Title

    Peculiarities of electrophysical properties of Bi2Te3 doped with Sn

  • Author

    Zhitinskaya, M.K. ; Nemov, S.A. ; Svechnikova, T.E.

  • Author_Institution
    State Tech. Univ., St. Petersburg, Russia
  • fYear
    1997
  • fDate
    26-29 Aug 1997
  • Firstpage
    72
  • Lastpage
    75
  • Abstract
    The influence of doping with Sn atoms is investigated in details. The method of additional doping with electroactive impurities is used. The peculiarities of kinetic coefficients of Bi2Te3 doped with Sn and J simultaneously are discussed. There is good reason to believe that these peculiarities are due to Sn-resonant states
  • Keywords
    Hall effect; Seebeck effect; bismuth compounds; hole density; impurity states; resonant states; semiconductor doping; semiconductor materials; thermomagnetic effects; tin; Bi2Te3:Sn; Hall coefficient; Nernst-Ettinghausen coefficient; Seebeck coefficient; Sn doping; electroactive impurities; hole concentration; impurity states; kinetic coefficients; resonant states; Bismuth; Chemicals; Crystals; Doping; Magnetic field measurement; Resonance; Semiconductor impurities; Tellurium; Thermoelectricity; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
  • Conference_Location
    Dresden
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4057-4
  • Type

    conf

  • DOI
    10.1109/ICT.1997.666977
  • Filename
    666977
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2304051