Title :
23% faster program and 40% energy reduction of carbon nanotube non-volatile memory with over 1011 endurance
Author :
Sheyang Ning ; Iwasaki, Tomoko Ogura ; Shimomura, Kazuya ; Johguchi, Koh ; Rosendale, Glen ; Manning, Monte ; Viviani, Darlene ; Rueckes, Thomas ; Takeuchi, Ken
Author_Institution :
Chuo Univ., Tokyo, Japan
Abstract :
Carbon nanotube (CNT) non-volatile memory provides excellent cell characteristics of >1011 endurance, low power, fast <;5ns array program, and multi-level cell (MLC) potential. For the first time, optimal program methods are investigated considering speed, power and cell variability. Discrete cells are measured and a multiple-pulse reset scheme is proposed to reduce verify-reset time and a gate pulse verify-reset scheme further reduces array program energy by 40%.
Keywords :
carbon nanotubes; low-power electronics; random-access storage; C; MLC; carbon nanotube nonvolatile memory; discrete cells; energy reduction; excellent cell characteristics; gate pulse verify-reset scheme; low power array program; multilevel cell; multiple-pulse reset scheme; optimal program; Arrays; Current measurement; Logic gates; Nonvolatile memory; Proposals; Pulse measurements; Resistance;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894384
