Title :
Transferring Optical Proximity Correction (OPC) Effect into Optical Mode
Author :
Li, Jianliang ; Yan, Qiliang ; Melvin, XLawrence S., III
Author_Institution :
Synopsys Inc., Hillsboro, OR
Abstract :
Because of the ever-decreasing feature size in modern photolithography, the complexity of pattern increases dramatically and tape-out time becomes prolonged. It is desirable to transfer OPC process into optical model for the sake of time. In this report, we introduce a novel method of calculating the OPC effect by modifying the optical model, which is equivalent to transferring the OPC effect into the optical model
Keywords :
photolithography; proximity effect (lithography); OPC effect; optical model; optical proximity correction effect; photolithography; Circuit analysis; Convolution; Design for manufacture; Lithography; Manufacturing processes; Mathematical model; Routing; Runtime; Semiconductor device manufacture; Semiconductor device modeling;
Conference_Titel :
Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-2795-7
DOI :
10.1109/ISQED.2007.161