• DocumentCode
    2304084
  • Title

    Transferring Optical Proximity Correction (OPC) Effect into Optical Mode

  • Author

    Li, Jianliang ; Yan, Qiliang ; Melvin, XLawrence S., III

  • Author_Institution
    Synopsys Inc., Hillsboro, OR
  • fYear
    2007
  • fDate
    26-28 March 2007
  • Firstpage
    771
  • Lastpage
    775
  • Abstract
    Because of the ever-decreasing feature size in modern photolithography, the complexity of pattern increases dramatically and tape-out time becomes prolonged. It is desirable to transfer OPC process into optical model for the sake of time. In this report, we introduce a novel method of calculating the OPC effect by modifying the optical model, which is equivalent to transferring the OPC effect into the optical model
  • Keywords
    photolithography; proximity effect (lithography); OPC effect; optical model; optical proximity correction effect; photolithography; Circuit analysis; Convolution; Design for manufacture; Lithography; Manufacturing processes; Mathematical model; Routing; Runtime; Semiconductor device manufacture; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7695-2795-7
  • Type

    conf

  • DOI
    10.1109/ISQED.2007.161
  • Filename
    4149127