Title :
14xx nm DFB InGaAsP/InP pump lasers with 500 mW CW output power for WDM combining
Author :
Garbuzov, D. ; Kudryashov, I. ; Tsekoun, A. ; Komissarov, A. ; Roff, W. ; Maiorov, M. ; Menna, R. ; Lunev, A. ; Connolly, J.
Author_Institution :
Princeton Lightwave Inc., Cranbury, NJ, USA
Abstract :
In conclusion, we have demonstrated 14xx nm DFB pump InGaAsP/InP ridge waveguide lasers with a record CW chip power level of 500 mW and ex-fiber or module power of 300 mW. Narrow emission line with very weak current/temperature peak position dependence allows us to use conventional wavelength multiplexing techniques to combine output of DFB pumps with different wavelengths into one SM fiber. Outputs from two 14xx nm DFB lasers with wavelengths differing by 16 nm have been combined in one SM fiber with efficiencies close to 90%, thereby producing a total 14xx nm power level of 500 mW.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical pumping; semiconductor lasers; wavelength division multiplexing; 300 mW; 500 mW; CW chip power level; DFB InGaAsP/InP pump lasers; DFB lasers; DFB pump InGaAsP/InP ridge waveguide lasers; DFB pumps; InGaAsP-InP; SM fiber; WDM combining; conventional wavelength multiplexing techniques; ex-fiber power; mW CW output power; module power; peak position dependence; power level; Fiber lasers; Indium phosphide; Laser excitation; Power generation; Power lasers; Pump lasers; Samarium; Temperature dependence; Waveguide lasers; Wavelength division multiplexing;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036504
