14xx nm DFB InGaAsP/InP pump lasers with 500 mW CW output power for WDM combining

Author

Garbuzov, D. ; Kudryashov, I. ; Tsekoun, A. ; Komissarov, A. ; Roff, W. ; Maiorov, M. ; Menna, R. ; Lunev, A. ; Connolly, J.

Author_Institution

Princeton Lightwave Inc., Cranbury, NJ, USA

fYear

2002

fDate

17-22 Mar 2002

Firstpage

486

Lastpage

487

Abstract

In conclusion, we have demonstrated 14xx nm DFB pump InGaAsP/InP ridge waveguide lasers with a record CW chip power level of 500 mW and ex-fiber or module power of 300 mW. Narrow emission line with very weak current/temperature peak position dependence allows us to use conventional wavelength multiplexing techniques to combine output of DFB pumps with different wavelengths into one SM fiber. Outputs from two 14xx nm DFB lasers with wavelengths differing by 16 nm have been combined in one SM fiber with efficiencies close to 90%, thereby producing a total 14xx nm power level of 500 mW.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical pumping; semiconductor lasers; wavelength division multiplexing; 300 mW; 500 mW; CW chip power level; DFB InGaAsP/InP pump lasers; DFB lasers; DFB pump InGaAsP/InP ridge waveguide lasers; DFB pumps; InGaAsP-InP; SM fiber; WDM combining; conventional wavelength multiplexing techniques; ex-fiber power; mW CW output power; module power; peak position dependence; power level; Fiber lasers; Indium phosphide; Laser excitation; Power generation; Power lasers; Pump lasers; Samarium; Temperature dependence; Waveguide lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036504

Filename

1036504