Thermal impedance of epi-up and epi-down interband cascade lasers

Author

Chryssis, Athanasios ; Ryu, Geunmin ; Dagenais, Mario

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA

fYear

2010

fDate

7-11 Nov. 2010

Firstpage

421

Lastpage

422

Abstract

Thermal impedance of epi-up and epi-down interband cascade lasers is reported. Two-dimensional heat diffusion model to simulate the temperature distribution in a 6 cascades ICL mounted epi-up or epi-down on an AIN submount is discussed. Lasers are etched through the active region, and they are gold electroplated to a thickness of about 5 μm on the epi-side. Thermal coefficient of 2 W/m-K for the InAs/AISb superlattice upper and lower cladding layers are analysed.

Keywords

III-V semiconductors; aluminium compounds; electroplating; etching; gold; heat transfer; indium compounds; integrated optics; optical fabrication; semiconductor heterojunctions; semiconductor lasers; semiconductor superlattices; temperature distribution; thermal diffusion; thermal resistance measurement; Au; InAs-AlSb; etching; gold electroplating; interband cascade lasers; semiconductor heterostructures; submount; superlattice material; temperature distribution; thermal impedance; two-dimensional heat diffusion model;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Photonics Society, 2010 23rd Annual Meeting of the

Conference_Location

Denver, CO

ISSN

-

Print_ISBN

978-1-4244-5368-9

Electronic_ISBN

-

Type

conf

DOI

10.1109/PHOTONICS.2010.5698939

Filename

5698939