Title :
The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices
Author :
Hsieh, E.R. ; Lu, P.Y. ; Chung, Steve S. ; Chang, K.Y. ; Liu, Chi Harold ; Ke, J.C. ; Yang, C.W. ; Tsai, C.T.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.
Keywords :
CMOS integrated circuits; electric breakdown; high-k dielectric thin films; BTI stress; BTI-induced breakdown path; HK CMOS devices; RTN measurement; RTN traps; TDDB lifetime plot; bias-temperature-instability; defective region; dielectric layers; high-k metal gate technology; shape like spindle; size 28 nm; snake-walking path; soft-breakdown path; time-dependent-dielectric-breakdown; Dielectrics; Electric breakdown; Electron traps; Logic gates; MOSFET; Metals; Stress;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894389
