Title :
Improved RF power extraction from 1.55µm Ge/Si n-i-p photodiodes with load impedance optimization
Author :
Huard, Andrew L. ; Piels, Molly ; Ramaswamy, Anand ; Bowers, John E. ; Derickson, Dennis
Author_Institution :
EE Dept., California Polytech. Univ. San Luis Obispo, San Luis Obispo, CA, USA
Abstract :
The RF output power of Ge/Si n-i-p waveguide photodetectors is improved by increasing the load impedance. The maximum extracted RF power at 3GHz is 17.13dBm with a compression current of 42mA using a 100Ω load.
Keywords :
Ge-Si alloys; integrated optoelectronics; microwave photonics; optical waveguides; p-i-n photodiodes; photodetectors; radiofrequency integrated circuits; semiconductor materials; Ge-Si; RF power extraction; current 42 mA; frequency 3 GHz; load impedance; load impedance optimization; photodiodes; resistance 100 ohm; waveguide photodetectors; wavelength 1.55 mum;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698944
