DocumentCode :
2304325
Title :
InAs photodiode on semi-insulating GaAs substrate with Zn-diffusion guard-ring for high-speed and low dark current performance
Author :
Shi, J.-W. ; Kuo, F.-M. ; Huang, B.-R. ; Lubyshev, D. ; Fastenau, J.M. ; Liu, W.K.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
433
Lastpage :
434
Abstract :
We demonstrate InAs photodiodes on semi-insulating GaAs substrate with Zn-diffusion guard-ring. It exhibits a 3-dB bandwidth as wide as 17 GHz under a small bias (-0.2V) with a reasonable dark current density (11A/cm2) at room temperature.
Keywords :
III-V semiconductors; diffusion; gallium arsenide; indium compounds; optical receivers; photodiodes; substrates; zinc; GaAs; bandwidth 17 GHz; dark current density; photodiode; semi-insulating substrate; temperature 293 K to 298 K; zinc-diffusion guard-ring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698945
Filename :
5698945
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2304325
بازگشت