• DocumentCode
    2304325
  • Title

    InAs photodiode on semi-insulating GaAs substrate with Zn-diffusion guard-ring for high-speed and low dark current performance

  • Author

    Shi, J.-W. ; Kuo, F.-M. ; Huang, B.-R. ; Lubyshev, D. ; Fastenau, J.M. ; Liu, W.K.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    433
  • Lastpage
    434
  • Abstract
    We demonstrate InAs photodiodes on semi-insulating GaAs substrate with Zn-diffusion guard-ring. It exhibits a 3-dB bandwidth as wide as 17 GHz under a small bias (-0.2V) with a reasonable dark current density (11A/cm2) at room temperature.
  • Keywords
    III-V semiconductors; diffusion; gallium arsenide; indium compounds; optical receivers; photodiodes; substrates; zinc; GaAs; bandwidth 17 GHz; dark current density; photodiode; semi-insulating substrate; temperature 293 K to 298 K; zinc-diffusion guard-ring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698945
  • Filename
    5698945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2304325