• DocumentCode
    2304339
  • Title

    Plasma Enhanced Chemical Vapor deposition modeling

  • Author

    Hyman, Emily ; Tsang, K. ; Lottati, J. ; Drobot, Adam

  • Author_Institution
    Science Applications International Corporation
  • fYear
    1991
  • fDate
    3-5 June 1991
  • Firstpage
    123
  • Lastpage
    123
  • Keywords
    Chemical vapor deposition; Electrons; Gases; Hydrogen; Inductors; Plasma chemistry; Plasma materials processing; Plasma simulation; Plasma temperature; Roentgenium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1991. IEEE Conference Record - Abstracts., 1991 IEEE International Conference on
  • Conference_Location
    Williamsburg, VA, USA
  • Print_ISBN
    0-7803-0147-1
  • Type

    conf

  • DOI
    10.1109/PLASMA.1991.695548
  • Filename
    695548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2304339