DocumentCode :
2304339
Title :
Plasma Enhanced Chemical Vapor deposition modeling
Author :
Hyman, Emily ; Tsang, K. ; Lottati, J. ; Drobot, Adam
Author_Institution :
Science Applications International Corporation
fYear :
1991
fDate :
3-5 June 1991
Firstpage :
123
Lastpage :
123
Keywords :
Chemical vapor deposition; Electrons; Gases; Hydrogen; Inductors; Plasma chemistry; Plasma materials processing; Plasma simulation; Plasma temperature; Roentgenium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1991. IEEE Conference Record - Abstracts., 1991 IEEE International Conference on
Conference_Location :
Williamsburg, VA, USA
Print_ISBN :
0-7803-0147-1
Type :
conf
DOI :
10.1109/PLASMA.1991.695548
Filename :
695548
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2304339
بازگشت