Demonstration of ultimate CMOS based on 3D stacked InGaAs-OI/SGOI wire channel MOSFETs with independent back gate

Author

Irisawa, T. ; Ikeda, Ken-ichi ; Moriyama, Y. ; Oda, Masaomi ; Mieda, E. ; Maeda, T. ; Tezuka, Taro

Author_Institution

Collaborative Res. Team Green Nanoelectron. Center (GNC), AIST, Tsukuba, Japan

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

An ultimate CMOS structure composed of high mobility wire channel InGaAs-OI nMOSFETs and SGOI pMOSFETs has been successfully fabricated by means of sequential 3D integration. Well behaved CMOS inverters and first demonstration of InGaAs/SiGe (Ge) dual channel CMOS ring oscillators are reported. The 21-stage CMOS ring oscillator operation was achieved at V_dd as low as 0.37 V with the help of adaptive back gate bias, V_BG control.

Keywords

CMOS integrated circuits; Ge-Si alloys; III-V semiconductors; MOSFET; gallium arsenide; indium compounds; semiconductor-insulator boundaries; three-dimensional integrated circuits; CMOS inverters; InGaAs-SiGe; SGOI pMOSFET; adaptive back gate bias; dual channel CMOS ring oscillators; high mobility wire channel InGaAs-OI nMOSFET; sequential 3D integration; ultimate CMOS structure; CMOS integrated circuits; Indium gallium arsenide; Inverters; Logic gates; MOSFET; Three-dimensional displays; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894395

Filename

6894395